MML1225 mxl1225 discrete semiconductors r dc components co., ltd. technical specifications of sensitive gate silicon controlled rectifiers voltage range - 300 to 380 volts current - 0.8 ampere description these silicon controlled rectifiers are high performance planar diffused pnpn devices. they are intended for low cost, high volume applications. pinning 1 = gate 2 = anode 3 = cathode characteristic symbol rating unit peak repetitive off-state MML1225 vdrm 300 v voltage(r gk=1kw) mxl1225 380 on-state rms current(tc=40oc) it(rms) 0.8 a peak gate current(10ms max) igm 1 a gate power dissipation(20ms max) p g(av) 0.1 w reverse peak gate voltage vgrm 8 v operating junction temperature tj -40 to +125 oc storage temperature tstg -40 to +125 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions peak repetitive forward ta=25oc idrm - - 5 ma vak=rated vdrm or vrrm off-state blocking current ta=125oc - - 100 rgk=1kw peak forward on-state voltage vtm - - 1.4 v itm=0.4a peak, tj=25oc - - 2.2 itm=0.8a peak, tj=25oc continuous dc gate trigger current igt - - 200 ma vak=7v dc, rl=100w continuous dc gate trigger voltage vgt - - 0.8 v vak=7v dc, rl=100w dc holding current ih - - 5 ma rgk=1kw, gate open dc latching current il - - 6 ma rgk=1kw, gate open critical rate-of-rise of off-state voltage dv/dt 25 - - v/ms vd=0.67vdrm, rgk=1kw, tj=125oc critical rate-of-rise of off-state current di/dt 30 - - a/ms ig=10ma, dig/dt=0.1a/ms, tj=125oc gate controlled delay time tgd - - 0.5 msec ig=10ma, dig/dt=0.1a/ms thermal resistance, junction to case rqjc 100 - - oc/w - electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) sot-89 dimensions in inches and (millimeters) .063(1.60).055(1.40) .066(1.70).059(1.50) .167(4.25).159(4.05) .016(0.41).014(0.35) .120(3.04) .117(2.96) .181(4.60).173(4.40) .060(1.52).058(1.48) .020(0.51).014(0.36) .102(2.60).095(2.40) 1 2 3
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